wuxi nce power semiconductor co., ltd page v1.0 1 NCE1012E pb free product http://www.ncepower.com nce n-channel enhancement mode power mosfet description the NCE1012E uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v. this device is suitable for use as a battery protection or in other switching application. general features v ds = 20v,i d =0.6a r ds(on) <350m ? @ v gs =4.5v r ds(on) <500m ? @ v gs =2.5v high power and current handing capability lead free product is acquired gate-source esd protection application battery operated systems load/ power switching cell phones pagers power supply converter circuits schematic diagram marking and pin assignment sot-523 top view package marking and ordering information device marking device device package reel size tape width quantity 1012e NCE1012E sot-523 ?180mm 8 mm 3000units absolute maximum ratings (t a =25 unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 10 v drain current-continuous i d 0.6 a drain current-pulsed (note 1) i dm 1 a maximum power dissipation p d 150 mw operating junction and st orage temperature range t j ,t stg -55 to 150 thermal characteristic thermal resistance,junction-to-ambient (note 2) r ja 833 /w electrical characteristics (t a =25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =250 a 20 22 - v
wuxi nce power semiconductor co., ltd page v1.0 2 NCE1012E pb free product http://www.ncepower.com parameter symbol condition min typ max unit zero gate voltage drain current i dss v ds =16v,v gs =0v - 0.3 100 na gate-body leakage current i gss v gs =4.5v,v ds =0v - - 1 a on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 0.5 0.75 1.2 v v gs =2.5v, i d =0.5a - 310 500 m ? drain-source on-state resistance r ds(on) v gs =4.5v, i d =0.6a - 210 350 m ? forward transconductance g fs v ds =10v,i d =0.4a - 1 - s dynamic characteristics (note4) input capacitance c lss - 60 - pf output capacitance c oss - 15 - pf reverse transfer capacitance c rss v gs = 0 v, f = 1.0 mhz, v ds = 10 v - 5 - pf switching characteristics (note 4) turn-on delay time t d(on) - 5 - ns turn-on rise time t r - 5 - ns turn-off delay time t d(off) - 25 - ns turn-off fall time t f v = 10 v, r = 47 ? id= 200 ma, vgen = 4.5 v, rg = 10 ? - 11 - ns total gate charge q g - 750 - pc gate-source charge q gs - 75 - pc gate-drain charge q gd vds = 10 v, vgs = 4.5 v, id = 250 ma - 225 - pc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =0.6a - 0.75 1.2 v diode forward current (note 2) i s - - 0.6 a notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300 s, duty cycle 2%. 4. guaranteed by design, not subject to production
wuxi nce power semiconductor co., ltd page v1.0 3 NCE1012E pb free product http://www.ncepower.com typical electrical and thermal characteristics vgs rgen vin g vdd rl vout s d figure 1:switching test circuit t j -junction temperature( ) figure 3 pow er dissipation vds drain-source voltage (v) figure 5 output characteristics v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% t r t on 90% 10% t off t d(off) t f 90% v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% 90% t r t on 90% 10% t off t d(off) t f 90% figure 2:switching waveforms i d - drain current (ma) f igure 6 drain-source on-resistance figure 8 drain-source on-resistance t j -junction temperature( ) p d power(w) i d - drain current (a) rdson on-resistance(m ) normalized on-resistance
wuxi nce power semiconductor co., ltd page v1.0 4 NCE1012E pb free product http://www.ncepower.com vgs gate-source voltage (v) figure 7 transfer characteristics vgs gate-source voltage (v) figure 9 rdson vs vgs qg gate charge (nc) figure 11 gate charge vds drain-source voltage (v) figure 8 capacitance vs vds vds drain-source voltage (v) figure 10 capacitance vs vds vds drain-source voltage (v) figure 13 safe operation area i d - drain current (ma) vgs gate-source voltage (v) c capacitance (pf) i s - reverse drain current (a) rdson (m ) i d - drain current (a)
NCE1012E pb free product http://www.ncepower.com wuxi nce power semiconductor co., ltd page v1.0 5 square wave pluse duration(sec) figure 14 normalized maximum transient thermal impedance r(t),normalized effective transient thermal im p edance
wuxi nce power semiconductor co., ltd page v1.0 6 NCE1012E pb free product http://www.ncepower.com sot-523 package information dimensions in millimeters dimensions in inches symbol min. max. min. max. a 0.700 0.900 0.028 0.035 a1 0.000 0.100 0.000 0.004 a2 0.700 0.800 0.028 0.031 b1 0.150 0.250 0.006 0.010 b2 0.250 0.350 0.010 0.014 c 0.100 0.200 0.004 0.008 d 1.500 1.700 0.059 0.067 e 0.700 0.900 0.028 0.035 e 0.500 typ. 0.020 typ. e1 0.900 1.100 0.035 0.043 l 0.400ref. 0.016ref. l1 0.260 0.460 0.010 0.018 ? 0 ? 8 ? 0 ? 8 ? notes 1. all dimensions are in millimeters. 2. tolerance 0.10mm (4 mil) unless otherwise specified 3. package body sizes exclude mold flash and gate burrs. mold flash at the non-lead sides should be less than 5 mils. 4. dimension l is measured in gauge plane. 5. controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
wuxi nce power semiconductor co., ltd page v1.0 7 NCE1012E pb free product http://www.ncepower.com attention: any and all nce power products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliabilit y, such as life-support systems, aircraft' s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your nce power representative nearest you before us ing any nce power products described or contained herein in such applications. nce power assumes no responsibility for equipment failu res that result from us ing products at values that exceed, even momentarily, rated values (such as maximum ratings, operati ng condition ranges, or other parameters) listed in products specifications of any and al l nce power products described or contained herein. specifications of any and all nce powe r products described or contained herein st ipulate the performance, characteristics, and functions of the described products in the independent state, and ar e not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer?s products or equipment. to verify symptoms and states that cannot be evaluated in an in dependent device, the customer s hould always evaluate and test devices mounted in the customer?s products or equipment. nce power semiconductor co.,ltd. strives to supply hi gh-quality high-reliability pr oducts. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger hum an lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circui ts and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all nce power products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by an y means, electronic or mechanical, including photocopying and recording, or any information storage or retrieva l system, or otherwise, without the prior written permission of nce power semiconductor co.,ltd. information (including circuit diagrams and circuit parameter s) herein is for example only ; it is not guaranteed for volume production. nce power believes information herein is accu rate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the nce power product that you intend to use. this catalog provides information as of sep.2010. specific ations and information herein are subject to change without notice.
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